a-Si/c-Si1-xGex/c-Si Heterojunction Solar Cells
نویسندگان
چکیده
The performance and material quality requirements of thin film a-Si/c-Si1-xGex/Si heterojunction solar cells are investigated by modeling and simulation. The effects of Ge content, Si1-xGex thickness, Si1-xGex lifetime and a-Si/c-Si1-xGex interfacial quality have been studied. The simulations predict that Si1-xGex based thin film solar cells provide a significant increase in solar cell output current for Ge fractions larger than 30%, due to the narrower band-gap and increased absorption. In addition, the efficiency of thin (2μm) Si1-xGex solar cells surpasses that of Si for minority carrier lifetimes larger than 0.5μs. For these 2μm thin layers, simulations predict reduced material quality requirements for Si1-xGex cells, with a clear performance advantage relative to Si based solar cells. KeywordsSolar, Heterojunction, SiGe, Lifetime, Efficiency, thin film
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